2SA1213-G Datasheet, PDF (1/4 Pages) Comchip Technology – General Purpose Transistor

General Purpose Transistor
2SA1213-G Series (PNP)
RoHS Device
Features
-Small flat package.
-Power amplifier and switching
-applications.
-Low saturation voltage.
-High speed switching time.
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Continuous current
Collector power dissipation
Symbol
VCBO
VCEO
VEBO
IC
PC
Value
-50
-50
-5
-2
500
Unit
V
V
V
A
mW
Thermal resistance from
RθJA
250
°C/W
junction to ambient
Junction temperature
Storage temperature
TJ
150
°C
Tstg
-55~+150
°C
1 : Base
2 : Collector
3 : Emitter
SOT-89-3L
0.181(4.60)
0.173(4.40)
0.061(1.55)
REF.
0.102(2.60)
0.091(2.30)
123
0.167(4.25)
0.155(3.94)
0.020(0.52)
0.013(0.32)
0.023(0.58)
0.016(0.40)
0.060(1.50)
TYP.
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.035(0.90)
0.017(0.44)
0.014(0.35)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-base breakdown voltage
IC =-0.1mA , IE=0
V(BR)CBO
Collector-emitter breakdown voltage
IC =-10mA , IB=0
V(BR)CEO
Emitter-base breakdown voltage
IE =-0.1mA , IC=0
V(BR)EBO
Collector cut-off current
VCB=-50V , IE=0
ICBO
Emitter cut-off current
VEB=-5V , IC=0
IEBO
DC current gain
VCE=-2V , IC=-500mA
hFE
VCE=-2V , IC=-2A
Collector-emitter saturation voltage
IC=-1A , IB=-50mA
VCE(sat)
Base-emitter saturation voltage
IC=-1A , IB=-50mA
VBE(sat)
Collector output capacitance
VCB=-10V , IE=0 , f=1MHZ
Cob
Transition frequency
VCE=-2V , IC=-0.5A
fT
Min
-50
-50
-5
70
20
100
Typ
40
Max
-100
-100
240
Unit
V
V
V
nA
nA
-0.5
V
-1.2
V
PF
MHZ
Classification Of hFE
Part No.
Range
Marking
2SA1213O-G
70-140
NO
2SA1213Y-G
120-240
NY
Company reserves the right to improve product design , functions and reliability without notice. REV: A
QW-BTR42
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