2N7002KDW-G Datasheet, PDF (1/5 Pages) Comchip Technology – MOSFET

MOSFET
2N7002KDW-G
N-Channel
RoHS Device
V(BR)DSS
60V
RDS(on)MAX
5Ω@10V
5.3Ω@4.5V
ID
340mA
Features
- High density cell design for low RDS(ON).
- Voltage control small signal switch.
- Rugged and reliable.
- High saturation current capability.
- ESD protected up to 2KV
Equivalent Circuit
6
5
4
D2
G1
S1
SOT-363
0.053(1.35)
0.045(1.15)
0.039(1.00)
0.035(0.90)
0.087(2.20)
0.079(2.00)
6
5
4
1
2
3
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.014(0.35)
0.006(0.15)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
S2
G2
D1
1
2
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source voltage
Symbol
VDS
VGS
Drain current
ID
Power dissipation
PD
Thermal resistance form junction to ambient
RθJA
Junction temperature range
TJ
Storge temperature range
TSTG
Value
60
20
340
0.15
833
-40 to +150
-55 to +150
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR50
Unit
V
V
mA
W
°C/W
°C
°C
REV:A
Page 1