2N7002-G_12 Datasheet, PDF (1/4 Pages) Comchip Technology – MOSFET

MOSFET
2N7002-G (N-Channel)
RoHS Device
Features
Power dissipation : 0.35W
Equivalent Circuit
D
G : Gate
G
S : Source
D : Drain
S
Maximum Ratings (at TA=25°C)
Parameter
Symbol
Drain-Source voltage
Drain current
Power dissipation
Junction and storage temperature
VDS
ID
PD
TJ, TSTG
Value
60
250
350
-55 ~ +150
Unit
V
mA
mW
°C
SOT-23
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
0.119(3.00)
0.110(2.80)
D
G
S
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.020(0.50)
0.013(0.35)
0.006(0.15)max
0.007(0.20)min
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol Min
Drain-Source breakdown voltage
VGS=0V, ID=10μA
V(BR)DSS
60
Gate-Threshold voltage
VDS=VGS, ID=250μA
Vth(GS)
1
Gate-body leakage
VDS=0V, VGS=15V
IGSS
VDS=60V, VGS=0V
Zero gate voltage drain current
IDSS
VDS=60V, VGS=0V, TJ=125°C
On-state drain current
VGS=10V, VDS=7.5V
VGS=4.5V, VDS=10V
800
ID(ON)
500
Drain-Source on resistance
VGS=10V, ID=250mA
VGS=4.5V, ID=200mA
rDS(ON)
Forward tran conductance
VDS=15V, ID=200mA
gts
Diode forward voltage
IS=200mA, VGS=0V
VSD
Total gate charge
Qg
Gate-Source charge
Gate-Drain charge
VDS=30V, VGS=10V, ID=250mA
Qgs
Qgd
Input capacitance
Ciss
Output capacitance
VDS=25V, VGS=0V, f=1MHz
COSS
Reverse transfer capacitance
CrSS
Turn-on time
Turn-off time
VDD=30V, RL=200Ω
ID=100mA, VGEN=10V
RG=10Ω
td(ON)
tr
td(off)
QW-BTR12
Comchip Technology CO., LTD.
Typ
70
1.5
1300
700
1.5
2.0
300
0.85
0.6
0.06
0.06
25
6
1.2
7.5
6
7.5
Max Unit
V
2.5
10
nA
1
μA
500
mA
3
Ω
4
mS
1.2
V
1.0
nC
pF
20
nS
20
REV:B
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