1N5817-G Datasheet, PDF (1/3 Pages) Comchip Technology – Schottky Barrier Rectifiers

Schottky Barrier Rectifiers
1N5817-G Thru. 1N5819-G
Reverse Voltage: 20 to 40 V
Forward Current: 1.0 A
RoHS Device
Features
-Metal-Semiconductor junction with guard ring.
-Epitaxial construction.
-Low forward voltage drop.
-High current capability.
-For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
Mechanical data
-Case: JEDEC DO-41 molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode
-Mounting position: Any
-Weight: 0.012 once, 0.34 grams
DO-41
1.000(25.40) Min.
0.034(0.90)
DIA.
0.028(0.70)
0.205(5.20)
0.165(4.20)
1.000(25.40) Min.
0.107(2.70)
DIA.
0.080(2.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol 1N5817-G
1N5818-G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current @TA=75°C
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum forward voltage at 1.0A DC
Maximum forward voltage at 3.0A DC
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance (Note 1)
@TJ=25°C
@TJ=100°C
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
VF
IR
CJ
RθJA
TJ
TSTG
20
14
20
0.450
0.750
30
21
30
1.0
25
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
1N5819-G
40
28
40
0.600
0.900
Unit
V
V
V
A
A
V
V
mA
pF
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BG016
Comchip Technology CO., LTD.
REV:A
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