1N4728A-G Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – SILICON ZENER DIODE

Axial Lead Zener Diode
1N4728A-G Thru. Z1330A-G
Zener Voltage: 3.3 to 330 Volts
DC Power: 1 Watts
RoHS Device
Features
- Glass passivated chip.
- Low leakage.
- Built-in strain relief.
- Low inductance.
- High peak reverse power dissipation.
- For use in stabilizing and clipping
with high power rating.
Mechanical data
- Case: Molded plastic.
- Epoxy: UL 94V-0 rate flame retardant.
- Terminals: Solderable per MIL-STD-202,
- method 208 guranteed.
- Polarity: Color band denotes cathode end.
- Mounting position: Any.
- Approx. weight: 0.35 grams(approx.).
DO-41
1.000(25.40)
MIN.
0.033(0.84)
DIA.
0.028(0.71)
0.205(5.21)
0.165(4.19)
1.000(25.40)
MIN.
0.117(2.97)
DIA.
0.090(2.29)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Symbol
Value
DC power dissipation at TL=50°C (Note 1)
PD
1
Maximum forward voltage at IF=200 mA
VF
Maximum thermal resistance junction
to ambient air (Note 2)
RΘJA
Junction temperature range
TJ
1.2
170
-55 to +175
Storage temperature range
TSTG
-55 to +175
Notes:
1. TL= Lead temperature at 3/8” (9.5mm) from body.
2. Valid provided that leads are kept at ambient temperature at a distance of 10mm from case.
Units
W
V
K/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice. REV: D
QW-BZ007
Comchip Technology CO., LTD.
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