1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

Fast Switching Diode
1N4148 / 1N4448
High Speed
Features
- Fast Switching Speed
- General Purpose Rectification
- Silicon Epitaxial Planar Construction
Mechanical Data
- Case: DO-35
- Terminals: Solderable per MIL-STD-202,
Method 208
- Polarity: Cathode Band
- Weight: 0.13 grams (approx.)
COMCHIP
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DO-35
0.079 (2.0)
Max.
1.0 (25.4)
Min.
0.157 (4.0)
Max.
0.024 (0.60)
Max.
1.0 (25.4)
Min.
Dimensions in inches and (millimeters)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_d
R_qJA
T_j , T_STG
1N4148
1N4448
100
75
53
300
500
150
1.0
2.0
500
1.68
300
-65 to +175
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
1N4148
1N4448
1N4448
Symbol
V_FM
I_RM
C_j
t_rr
Min
¾
0.62
¾
¾
¾
¾
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
mA
mA
mA
nA
pF
ns
Test Condition
I_F = 10mA
I_F = 5.0mA
I_F = 100mA
V_R = 75V
V_R = 70V, T_j = 150°C
V_R = 20V, T_j = 150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = 10mA to I_R =1.0mA
V_R = 6.0V, R_L = 100W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
MDS0312005A
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