1N4001G Datasheet, PDF (1/2 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

Glass Passivated Standard Rectifier
1N4001G THRU 1N4007G
Current: 1A
Votlage: 50 ~ 1000V
DO-41
Features
Low forward voltage drop
High current capability
1.0(25.4)
MIN.
.034(.86)
DIA.
.028(.71)
Low reverse leakage current
High Surge current capability
.205(5.2)
Mechanical Data
Case: Molded plastic DO-41
Epoxy: UL 94-0 rate flame retardant
Terminal: Solderable per MIL-STD-202
.160(4.1)
1.0(25.4)
MIN.
.107(2.7)
DIA.
.080(2.0)
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Dimensions in inches and (millimeters)
Weight: 0.34 gram
Maximum Rating and Electrical Characteristics
Rating at 25^oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
SYMBOL
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
50
100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS
35
70
140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC
50
100 200 400 600 800 1000 V
Maximum Average Forward Rectified
Current TL=55^oC
I(AV)
1.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 1.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Typical junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
CJ
R JA
Operating Junction and Storage
Temperature Range
TJ,TSTG
NOTES : (1) Thermal Resistance junction to lead.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
30
1.1
5.0
100
10
45
-55 to +150
A
V
uA
uA
pF
o_C/W
o_C
“-G” suffix designates RoHS compliant Version