CPC5603_12 Datasheet, PDF (1/5 Pages) Clare, Inc. – N-Channel Depletion Mode FET

CPC5603
N-Channel Depletion Mode FET
Parameter
Drain-to-Source Voltage - V_DS
Max On-Resistance - R_DS(on)
Max Power
Rating
415
14
2.5
Units
V

W
Features
• 415V Drain-to-Source Voltage
• Depletion Mode Device Offers Low R_DS(on)
at Cold Temperatures
• Low On-Resistance: 8 (Typical) @ 25°C
• Low V_GS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecom
• Normally-On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
Description
The CPC5603 is an N-channel, depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device particularly in difficult application
environments such as telecommunications, security,
and power supplies.
One of the primary applications for the CPC5603 is
as a linear regulator/hook switch for the LITELINK™
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8, a
drain-to-source voltage of 415V and is available in
the SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part Number
CPC5603C
CPC5603CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/reel)
Pb
RoHS
2002/95/EC
DS-CPC5603-R05
e3
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
www.clare.com
1