CPC5603C Datasheet, PDF (1/3 Pages) Clare, Inc. – N Channel Depletion Mode FET

CPC5603C
N Channel Depletion Mode FET
Features
• Low on resistance 8 ohms
• Breakdown voltage 415V minimum
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecom
Description
The CPC5603C is an “N” channel depletion mode
Field Effect Transistor (FET) that utilizes Clare’s
proprietary third generation vertical DMOS process.
The third generation process realizes world
class, high voltage MOSFET performance in an
economical silicon gate process. The vertical DMOS
process yields a highly reliable device particularly
in difficult application environments such as
telecommunications.
One of the primary applications for the CPC5603C is
as a linear regulator/ hook switch for the LITELINK™
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603C has a typical on-resistance of 8Ω, a
breakdown voltage exceeding 415V and is available
in an SOT-223 package. As with all MOS devices,
the FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part #
CPC5603C
Description
N-Channel Depletion Mode FET, SOT-223
Package (80/tube)
CPC5603CTR
N-Channel Depletion Mode FET, SOT-223
Package Tape and Reel (1000/reel)
DS-CPC5603C-R01.0
www.clare.com
Package Pinout
D
4
123
GDS
PIN # NAME
1
GATE
2 DRAIN
3 SOURCE
4 DRAIN
Pin #
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
1