CPC5603 Datasheet, PDF (1/3 Pages) Clare, Inc. – N Channel Depletion Mode FET

CPC5603
N Channel Depletion Mode FET
Parameter
Drain-to-Source Voltage (V_DS)
Max On-Resistance (R_on-max)
Max Power
Rating
415
14
2.5
Units
V
Ω
W
Features
• 415V Drain-to-Source Voltage
• Low On-Resistance: 8 Ohms (Typical)
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecom
Description
The CPC5603 is an “N” channel depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device particularly in difficult application
environments such as telecommunications.
One of the primary applications for the CPC5603 is
as a linear regulator/ hook switch for the LITELINK™
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8Ω, a
drain-to-source voltage of 415V and is available in
an SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and thermal-
induced secondary breakdown.
Ordering Information
Part #
CPC5603C
CPC5603CTR
Description
N-Channel Depletion Mode FET, SOT-223
Package (80/tube)
N-Channel Depletion Mode FET, SOT-223
Package Tape and Reel (1000/reel)
Pb
RoHS
2002/95/EC
DS-CPC5603-R03
e3
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
www.clare.com
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