CPC3730C Datasheet, PDF (1/4 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs

BV_DSX/
BV_DGX
350V
R_DS(ON)
(max)
30Ω
I_DSS (min)
140mA
Package
SOT-89
Features
• Depletion mode device offers low R_DS(ON) at cold
temperatures
• Low on resistance 30 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 350V
• Low V_GS(off) voltage -1.6 to -3.9V
• Small package size SOT-89
Applications
• Ignition modules
• Normally-on switches
• Solid state relays
• Converters
• Telecommunications
• Power supply
Package Pinout
D
G
D
S
(SOT-89)
CPC3730C
N-Channel Depletion-Mode
Vertical DMOS FETs
Description
The CPC3730C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3730C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730C offers a low 30 ohm maximum
on-state resistance at 25ºC.
The CPC3730C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3730C
CPC3730CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Switching Waveform
0V
0V
INPUT INPUT
-10V ^10%-10V
10%
t_(ON)
90%
90%
t_(ON)
t_(OFF)
t_(OFF)
t_d(ON)
t_r t_d(ON)
t_r t_d(OFF)
t_Ft_d(OFF)
t_F
V_DD
V_DD
OUTPUT OUTPUT
0V
0V
10%
10%
90%
90%
10%
10%
90%
90%
Test Circuit
PULSE PULSE
GENERATOGRENERATOR
R_gen
R_gen
INPUT INPUT
DS-CPC3730C-R00B.2
www.clare.com
V_DD
V_DD
R_L
R_L
OUTPUT OUTPUT
D.U.T. D.U.T.
1