CPC3730 Datasheet, PDF (1/5 Pages) Clare, Inc. – N-Channel Depletion-Mode FET

V_(BR)DSX /
V_(BR)DGX
350V_P
R_DS(on)
(max)
30
I_DSS (min)
140mA
Features
• Low R_DS(on) at Cold Temperatures
• R_DS(on) 30 max. at 25ºC
• High Input Impedance
• High Breakdown Voltage: 350V_P
• Low V_GS(off) Voltage: -1.6 to -3.9V
• Small Package Size: SOT-89
Applications
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
CPC3730
N-Channel Depletion-Mode FET
PRELIMINARY
Package
SOT-89
Description
The CPC3730 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high power applications. The CPC3730
is a highly reliable FET device that has been used
extensively in Clare’s solid state relays for industrial
and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730 offers a low, 30 maximum, on-state
resistance at 25ºC.
The CPC3730 has a minimum breakdown voltage
of 350V_P , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Package Pinout
D
G
D
S
(SOT-89)
Ordering Information
Part #
CPC3730C
CPC3730CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
Pb
RoHS
2002/95/EC
e3
DS-CPC3730-R00E
PRELIMINARY
1