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CPC3710C Datasheet, PDF (1/4 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FETs
CPC3710C
N-Channel Depletion-Mode
Vertical DMOS FETs
BVDSX/
BVDGX
250V
RDS(ON)
(max)
10Ω
IDSS (min)
220mA
Package
SOT-89
Description
The CPC3710C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
Features
MOSFET performance in an economical silicon gate
• Depletion mode device offers low RDS(ON) at cold
temperatures
process. Our vertical DMOS process yields a robust
device for high power applications with high input
• Low on resistance 10 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 250V
• Low VGS(off) voltage -1.6 to -3.9V
Y • Small package size SOT-89
R Applications
• Ignition modules
• Normally-on switches
A • Solid state relays
• Converters
• Telecommunications
IN • Power supply
IM Package Pinout
D
L G
D
S
PRE (SOT-89)
impedance. The CPC3710C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3710C offers a low 10 ohm maximum on-
state resistance at 25ºC.
The CPC3710C has a minimum breakdown voltage of
250V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3710C
CPC3710CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Switching Waveform
Test Circuit
VDD
VDD
0V
INPUT
-10V
VDD
OUTPUT
0V
0V
10%
INPUT
-10V
t(ON)
10%
td(ON)
tr
VDD
10%
OUTPUT
900V%
90%
90%
PULSE
GENERATOR
t(tO(ONF)F)
tdt(Od(NO)FF) tr tF
t(OFF)
td(OFF)
tF
Rgen
10%
10%
10%
INPUT
90% 90%
90%
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
RL
OUTPUT
D.U.T.
D.U.T.
DS-CPC3710C-R00A.8
www.clare.com
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