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| CPC3703_12 Datasheet, PDF (1/5 Pages) Clare, Inc. – N-Channel Depletion-Mode Vertical DMOS FET | |||
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V(BR)DSX /
V(BR)DGX
250V
RDS(on)
(max)
4ï
IDSS (min)
360mA
Package
SOT-89
Features
⢠High Breakdown Voltage: 250V
⢠Low On-Resistance: 4ï max. at 25ºC
⢠Low VGS(off) Voltage: -1.6 to -3.9V
⢠Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
⢠High Input Impedance
⢠Small Package Size: SOT-89
Applications
⢠Ignition Modules
⢠Normally-On Switches
⢠Solid State Relays
⢠Converters
⢠Telecommunications
⢠Power Supply
Package Pinout
D
G
D
S
(SOT-89)
CPC3703
N-Channel Depletion-Mode
Vertical DMOS FET
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clareâs proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance, for
use in high-power applications. The CPC3703 is a
highly reliable device that has been used extensively
in Clareâs Solid State Relays for industrial and
telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4ï maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703C
CPC3703CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
Pb
RoHS
2002/95/EC
e3
DS-CPC3703-R04
www.clare.com
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