CPC3701 Datasheet, PDF (1/4 Pages) Clare, Inc. – Vertical DMOS FET

V_(BR)DSX /
V_(BR)DGX
60V
R_DS(on)
(max)
1
I_DSS (min)
600mA
Package
SOT-89
Features
• Depletion Mode Device Offers Low R_DS(on)
at Cold Temperatures
• Low On-Resistance: 1 max. at 25ºC
• High Input Impedance
• Low V_GS(off) Voltage: -0.8 to -2.9V
• Small Package Size SOT-89
Applications
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Security
• Power Supplies
Package Pinout (SOT-89)
D
G
D
S
CPC3701
60V, Depletion-Mode, N-Channel
Vertical DMOS FET
Description
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3701
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3701C
CPC3701CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
Pb
RoHS
2002/95/EC
e3
DS-CPC3701-R02
www.clare.com
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