CLT335 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN Silicon Phototransistor

CLT335
NPN Silicon Phototransistor
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
® _{Clairex}
Technologies, Inc.
March, 2001
0.215 (5.46)
0.205 (5.21)
0.158 (4.01)
0.136 (3.45)
0.060 (1.52)
max
0.025 (0.64)
max
COLLECTOR
B_NA_/S_CE
EMITTER
0.100 (2.54) dia
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (M_CIL_aL_sIM_eE₁T₇ERS)
features
absolute maximum ratings (T_A = 25°C unless otherwise stated)
• ±9° acceptance angle
storage temperature ....................................................................... -65°C to +150°C
• custom aspheric lensed TO-18
package
operating temperature .................................................................... -65°C to +125°C
lead soldering temperature⁽¹⁾ .......................................................................... 260°C
• transistor base is not bonded
collector-emitter voltage...................................................................................... 30V
• tested and characterized at 850nm
• RoHS compliant
continuous collector current ............................................................................. 50mA
continuous power dissipation⁽²⁾..................................................................... 250mW
description
The CLT335 is a silicon NPN
phototransistor mounted in a TO-18
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum
2. Derate linearly 2.0mW/°C from 25°C free air temperature to T_A = +125°C.
package which features a custom
double convex glass-to-metal
sealed aspheric lens. Narrow
acceptance angle enables excellent
on-axis coupling. The CLT335 is
mechanically and spectrally matched
to Clairex's CLE335 LED. For
additional information, call Clairex.
electrical characteristics (T_A = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
IL
Light current⁽³⁾
1.0
2.5
-
mA VCE=5V, Ee=0.5mW/cm²
ICEO
Collector dark current
-
-
25
nA VCE=10V, Ee=0
V(BR)CEO Collector-emitter breakdown
30
-
-
V
IC=100µA
tr, tf
Output rise and fall time
-
5.0
-
µs I_C = 1mA, V_CE=5V, R_L=1kΩ.
θHP
Total angle at half sensitivity points
-
18
-
deg.
notes: 3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 850nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/16/06
Clairex Technologies, Inc.
Phone: [phone]
1301 East Plano Parkway
Fax: [phone]
Plano, Texas 75074-8524
www.clairex.com