CLT135 Datasheet, PDF (1/1 Pages) Clairex Technologies, Inc – NPN Silicon Phototransistor

CLT135
NPN Silicon Phototransistor
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
® _{Clairex}
Technologies, Inc.
July, 2001
0.215 (5.46)
0.205 (5.21)
0.158 (4.01)
0.136 (3.45)
0.060 (1.52)
max
0.025 (0.64)
max
COLLECTOR
B_NAS_/CE
EMITTER
0.100 (2.54) dia
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (_CM_aIL_sL_eIM₁E₇TERS)
features
• high sensitivity
absolute maximum ratings (T_A = 25°C unless otherwise stated)
storage temperature ...................................................................... -65°C to +150°C
• ± 9° acceptance angle
• custom aspheric lensed TO-18
package
• transistor base is not bonded
• tested and characterized at 940nm
operating temperature ................................................................... -65°C to +125°C
lead soldering temperature⁽¹⁾ ......................................................................... 260°C
collector-emitter voltage..................................................................................... 30V
continuous collector current ............................................................................ 50mA
continuous power dissipation⁽²⁾.................................................................... 250mW
• usable throughout visible and near
infrared spectrum
notes:
• RoHS compliant
1. 0.06” (1.5mm) from the header for 5 seconds maximum
2. Derate linearly 2.0mW/°C from 25°C free air temperature to T_A = +125°C.
description
The CLT135 is an NPN silicon
phototransistor mounted in a TO-18
package which features a custom
double convex glass-to-metal sealed
aspheric lens. Narrow acceptance
angle enables excellent on-axis
coupling. The CLT135 is spectrally
and mechanically matched to the
CLE135 IRED. For additional
information, call Clairex.
electrical characteristics (T_A = 25°C unless otherwise noted)
symbol parameter
min typ max _units test conditions
IL
Light current⁽³⁾
1.0
2.5
-
mA VCE = 5V, Ee = 0.5mW/cm²
ICEO
Collector dark current
-
-
25
nA VCE = 10V, Ee = 0
V(BR)CEO
Collector-emitter breakdown
30
-
-
V I_C = 100µA
tr, tf
Output rise and fall time
-
3.0
-
µs I_C = 1.0mA, VCE=5V, RL=100Ω.
θHP
Total angle at half sensitivity points
18
-
deg.
notes: 3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 940nm
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/16/06
Clairex Technologies, Inc.
Phone: [phone]
1301 East Plano Parkway
Fax: [phone]
Plano, Texas 75074-8524
www.clairex.com