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CLT130 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN Silicon Phototransistors
CLT130,CLT131,CLT132,CLT133
NPN Silicon Phototransistors CLT130, CLT131, CLT132 and CLT133 are
exact replacements for obsolete part numbers
CLT2130, CLT2140, CLT2150 and CLT2160.
® Clairex
Technologies, Inc.
July, 2001
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
0.215 (5.46)
0.205 (5.21)
0.158 (4.01)
0.136 (3.45)
0.060 (1.52)
max
0.025 (0.64)
max
COLLECTOR
BASE
EMITTER
0.100 (2.54) dia
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES (CMaILsLeIM1E7TERS)
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
• high sensitivity
storage temperature .........................................................................-65°C to +150°C
• ± 9° acceptance angle
• custom aspheric lensed TO-18
package
• transistor base is bonded
• usable throughout visible and near
operating temperature .....................................................................-65°C to +125°C
lead soldering temperature(1) ...........................................................................260°C
collector-emitter voltage...................................................................................... 30V
continuous collector current ............................................................................. 50mA
continuous power dissipation(2)......................................................................250mW
infrared spectrum
• RoHS compliant
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum
description
2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C.
The CLT130-CLT133 series are NPN
silicon phototransistors mounted in
TO-18 packages which feature
custom double convex glass-to-metal
sealed aspheric lenses. Narrow
acceptance angle enables excellent
on-axis coupling. These devices are
mechanically and spectrally matched
to the CLE130-CLE133 series of
IREDs. For additional information,
call Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
Light current(3)
IL
CLT130
CLT131
CLT132
CLT133
0.60
-
1.2
-
2.4
-
4.0
-
-
mA VCE=5V, Ee=1.5mW/cm2
-
mA
VCE=5V, Ee=1.5mW/cm2
-
mA
VCE=5V, Ee=1.5mW/cm2
-
mA
VCE=5V, Ee=1.5mW/cm2
ICEO
Collector dark current
-
-
25
nA VCE=10V, Ee=0
V(BR)CEO
Collector-emitter breakdown
30
-
-
V
IC=100µA
tr, tf
Output rise and fall time
-
5.0
-
µs IC =1mA, VCE=5V, RL=1kΩ.
θHP
Total angle at half sensitivity points
-
18
-
deg.
note: 3. Radiation source for all light current testing is a 940nm IRED.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/22/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com