CLD171 Datasheet, PDF (1/1 Pages) Clairex Technologies, Inc – Large Active Area Silicon Planar photodiode

CLD171
Large Active Area
Silicon Planar photodiode
This product is tested to satisfy the
conditions of both the CLD171 and
the CLD171R.
0.253 (6.43)
0.243 (6.17)
0.080 (2.03)
0.070 (1.78)
® _{Clairex}
Technologies, Inc.
September, 2002
1.00 (25.4) min.
0.288 (7.32)
0.278 (7.06)
ANODE
CATHODE
0.200 (5.08)
0.065 (1.65) max
features
• 130° acceptance angle
• 860nm peak response
• 125°C operating temperature
• usable for visible through near-IR
description
The CLD171 and CLD171R, are
0.122" x 0.122" active area silicon
photodiodes featuring high linearity
and low dark current. They are
epoxy encapsulated for lower cost
applications. Wide acceptance
angle permits use in IR air
communications, ambient light
detection, safety and monitoring,
security systems, etc.
Anode lead is identified by red dot on side of substrate.
ALL DIMENSIONS ARE IN INCH^CE^aS^se(M¹IL³LIMETERS)
absolute maximum ratings (T_A = 25°C unless otherwise stated)
storage temperature........................................................................-40°C to +125°C
operating temperature.....................................................................-40°C to +125°C
lead soldering temperature⁽¹⁾ .......................................................................... 260°C
reverse voltage ...................................................................................................30V
continuous power dissipation⁽²⁾ ....................................................................200mW
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
2. Derate linearly 1.6mW/°C free air temperature to T_A = +125°C.
If higher operating temperature is required, see the CLD160.
electrical characteristics (T_A = 25°C unless otherwise noted)
symbol parameter
min typ
max units test conditions
I_SC
Short-circuit current⁽³⁾
-
70
-
µA VBIAs =0V, Ee = 5mW/cm²
I_D
Dark current
V_O
Open circuit voltage⁽³⁾
-
-
10
nA V_F = 100mV, E_e = 0
-
-
5.0
nA VR = 15V, Ee = 0
-
0.35
-
V
E_e = 5mW/cm²
V_BR
Reverse breakdown
25
-
-
V I_R = 100µA
C_J
Junction capacitance
t_r, t_f
Output rise and fall time⁽⁴⁾
-
-
200
pF V_BIAS = 0V, f = 1MHz
-
-
12
µs R_L = 1kΩ
Θ_HP
Total angle at half sensitivity points
-
130
-
deg.
note: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and E_e = 20mW/cm².
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: [phone]
1301 East Plano Parkway
Fax: [phone]
Plano, Texas 75074-8524
www.clairex.com