CLD156 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Large Active Area Silicon Planar photodiode

CLD156
Large Active Area
Silicon Planar photodiode
This product is tested to satisfy the
conditions of both the CLD156 and
the CLD156R.
0.365 (9.27)
0.355 (9.02)
0.186 (4.72)
0.164 (4.17)
® _{Clairex}
Technologies, Inc.
May, 2001
1.000 (25.4) min
0.030 (0.76) nom
0.200 (5.08)
0.330 (8.38)
0.320 (8.13)
CATHODE (long lead)
ALL DIMENSIONS ARE IN INCHES (_CMI_aL_sLI_eM₁ET₂ERS)
features
• 100° acceptance angle
• 860nm peak response
• TO-5 hermetic package
• usable for visible through near-IR
• RoHS compliant
absolute maximum ratings (T_A = 25°C unless otherwise stated)
storage temperature........................................................................-65°C to +150°C
operating temperature.....................................................................-65°C to +150°C
lead soldering temperature⁽¹⁾ .............................................................................260°
reverse voltage ...................................................................................................30V
continuous power dissipation⁽²⁾ .....................................................................200mW
description
The CLD156 and CLD156R are
0.122" x 0.222" active area silicon
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
2. Derate linearly 1.28mW/°C free air temperature to T_A = +150°C.
photodiodes featuring high linearity
and low dark current. The TO-5
header provides thermal
environment for reliable operation
over a wide temperature range. Wide
acceptance angle permits use in IR
air communications, ambient light
detection, safety and monitoring,
security systems, etc. For additional
information, call Clairex.
electrical characteristics (T_A = 25°C unless otherwise noted)
symbol parameter
min typ
max units test conditions
I_SC
Short-circuit current⁽³⁾
-
100
-
µA VBIAS = 0V, Ee = 5mW/cm²
I_D
Dark current
V_O
Open circuit voltage⁽³⁾
-
-
50
nA V_F = 100mV, E_e = 0
-
-
50
nA V_R = 15V, E_e = 0
-
0.35
-
V
E_e = 5mW/cm²
V_BR
Reverse breakdown
25
-
-
V
I_R = 100µA
C_J
Junction capacitance
t_r, t_f
Output rise and fall time⁽⁴⁾
-
-
400
pF V_BIAS = 0V, f = 1MHz
-
-
10
µs R_L = 1kΩ
Θ_HP
Total angle at half sensitivity points
-
100
-
deg.
notes: 3. Radiation source is a frosted tungsten lamp at a color temperature of 2854K or equivalent.
4. Radiation source is an AlGaAs IRED operating at a peak emission wavelength of 880nm and E_e = 20mW/cm².
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc.
Phone: [phone]
1301 East Plano Parkway
Fax: [phone]
Plano, Texas 75074-8524
www.clairex.com