CS30L60CT Datasheet, PDF (2/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CS30L60CT
Super Low Barrier High Voltage Power Rectifier
■ Rating and characteristic curves
Fig. 1 - Forward Power Dissipation (per diode)
16
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
12
T_A=150°C
10
T_A=125°C
8
T_A=100°C
T_A=75°C
1
T_A=25°C
4
0
0
5
10
15
20
25
Average Forward Current,I_F(AV) (A)
Fig. 3 - Reverse Characteristics (per diode)
100
T_A=150^OC
10
T_A=125^OC
T_A=100^OC
1
T_A=75^OC
0.1
T_A=50^OC
T_A=25^OC
0.0110
20
30
40
50
60
70
Reverse Voltage,V_R (V)
Fig. 5 - Total Capacitance VS.
Reverse Voltage (per diode)
10000
1000
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,V_F (Volts)
Fig.4 - Forward Current Derating Curve(per diode)
25
20
15
10
5
0
25 50 75 100 125 150 175
Case Temperature,T_C ( ^OC)
Fig. 6 - Maximum Avalanche Power Curve
100000
10000
1000
100
10
100
0.1
1
10
Reverse Voltage,V_R (V)
100
2
1
0.01
0.1
1
10
100
Pulse Duration,T_P (us)
1000
Document ID : DS-11K4H
Revised Date : 2015/08/04
Revision : C5