CS30L60CT-A Datasheet, PDF (2/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
■ Rating and characteristic curves
Fig. 1 - Forward Power Dissipation (per diode)
16
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
12
8
4
0
0
5
10
15
20
25
Average Forward Current,I_F(AV) (A)
Fig. 3 - Reverse Characteristics (per diode)
1000
100
10
1
0.1
0.01
0
T
=
A
1
5
O
0
C
T_A=125^OC
T_A=100^OC
T_A=75^OC
T_A=25^OC
10
20
30
40
50
60
Reverse Voltage,V_R (V)
Fig. 5 - Total Capacitance VS.
Reverse Voltage (per diode)
10000
1000
10
T_A=150°C
1
T_A=125°C
T_A=100°C
0.1
T_A=75°C
T_A=25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage,V_F (Volts)
Fig.4 - Forward Current Derating Curve (per diode)
18
15
12
9
6
3
0
25 50 75 100 125 150 175
Case Temperature,T_C ( ^OC)
Fig. 6 - Maximum Avalanche Power Curve
100000
10000
1000
100
10
100
0.1
1
10
Reverse Voltage,V_R (V)
100
2
1
0.01
0.1
1
10
100
Pulse Duration,T_P (us)
1000
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7