CS30L100CT Datasheet, PDF (2/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
■ Rating and characteristic curves
CS30L100CT
Super Low Barrier High Voltage Power Rectifier
Fig. 1 - Forward Power Dissipation (per diode)
10
8
6
4
2
0
0
5
10
15
20
Average Forward Current,I_F(AV) (A)
Fig. 2 - Instantaneous Forward
Characteristics (per diode)
100
10
T_A=150°C
T_A=125°C
1
T_A=100°C
T_A=75°C
0.1
T_A=25°C
0.01
0
0.2
0.4
0.6
0.8 0.9
Instantaneous Forward Voltage,V_F (Volts)
Fig. 3 - Reverse Characteristics (per diode)
100
10
1
0.1
0.01
0.0010
T_A=150^OC
T_A=125^OC
T_A=100^OC
T_A=75^OC
T_A=25^OC
20
40
60
80
100
120
Reverse Voltage,V_R (V)
Fig.4 - Forward Current Derating Curve (per diode)
15
10
5
single phase half wave 60Hz
resistive or inductive load
0
25 50 75 100 125 150 175
Ambient Temperature,T_A ( ^OC)
Document ID : DS-11K5C
2
Revised Date : 2015/08/04
Revision : C6