MHU04N65 Datasheet, PDF (1/10 Pages) Chip Integration Technology Corporation – Silicon N-Channel Power MOSFET

Chip Integration Technology Corporation
MHU04N65
Silicon N-Channel Power MOSFET
Main Product Characteristics
I_D
V_DSS
P_D(T_C=25^oC)
R_DS(ON)Typ
4A
650V
75W
2.3Ω
■ Features
• Fast switching.
• ESD improved capability.
• Low gate charge. (Typical Data:13nC)
• Low reverse transfer capacitances.(Typical:2.2pF)
• 100% single pulse avalanche energy test.
■ Application
• Power switch circuit of adaptor and charger.
■ Outline
TO-251
12 3
1.Gate 2.Drain 3.Source
Drain
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : JEDEC TO-251 molded plastic body over
passivated chip
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Gate
Source
Inner Equivalent principium Chart
■ Absolute(T_C = 25^OC unless otherwise specified)
PARAMETER
Drain-Source Voltage
CONDITIONS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current(Note:1)
Gate-Source Voltage
T_C = 100^OC
Single Pulse Avalanche Energy(Note:2)
Avalanche Current(Note:1)
Repetitive Avalanche Energy(Note:1)
Power Dissipation
Peak Diode Recovery dv/dt(Note:3)
Power Dissipation
Derating factor above 25^OC
Gate source ESD
Operating Junction and Storage Temperature Range
HBM-C = 100pF, R = 1.5kΩ
Maximum temperature for soldering
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, I_D = 5.5A, Start T_J = 25^OC.
3.I_SD =4A,di/dt ≤100A/us, V_DD≤BV_DS, Start T_J = 25^OC.
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
P_D
dV/dt
V_ESD(G-S)
T_J, T_STG
T_L
MHU04N65
650
4
3.2
16
±30
150
2.5
30
75
0.6
5.0
3000
150,-55 ~ +150
300
UNIT
V
A
V
mJ
A
mJ
W
W/^OC
V/ns
V
O_C
O_C
Document ID : DS-22M76
1
Revised Date : 2015/08/24
Revision : C