MHF12N65CT Datasheet, PDF (1/11 Pages) Chip Integration Technology Corporation – Silicon N-Channel Power MOSFET

■ General Description
MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
■ Features
• Fast Switching
• Low ON Resistance(Rdson≤0.7Ω)
• Low Gate Charge (Typical Data: 44nC)
• Low Reverse transfer capacitances(Typical:16pF)
• 100% Single Pulse avalanche energy Test
■ Applications
• Power switch circuit of adaptor and charger.
MHF12N65CT
Silicon N-Channel Power MOSFET
■ Absolute (Tc= 25℃ unless otherwise specified):
Document ID : DS-21M64
1
Revised Date : 2015/09/16
Revision : C1