MHF10N60CT Datasheet, PDF (1/8 Pages) Chip Integration Technology Corporation – 600V Silicon N-Channel Power MOSFET

MHF10N60CT
600V Silicon N-Channel Power MOSFET
■ Features
• Fast switching.
• ESD improved capability.
• Low gate charge.
• Low reverse transfer capacitances.
• 100% single pulse avalanche energy test.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220F molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
Gate
• Weight : Approximated 2.25 gram.
■ Outline
TO-220F
0.409(10.40)
0.378(9.60)
0.189(4.80)
0.173(4.40)
0.114(2.90)
0.098(2.50)
Drain
Source
0.638(16.20)
0.606(15.40)
00.1.11380(3(3.0.3) 0)
Marking code
0.551(14.0)
0.472(12.0)
GDS
0.056(1.42)
0.044(1.12)
0.035(0.90)
0.028(0.70)
0.108(2.74)
0.092(2.34)
0.102(2.60)
0.082(2.10)
0.022(0.55)
0.014(0.35)
Dimensions in inches and (millimeters)
■ Absolute(T_C = 25^OC unless otherwise specified)
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current(1)
Gate-Source Voltage
Single Pulse Avalanche Energy(2)
Avalanche Current(1)
Repetitive Avalanche Energy(1)
CONDITIONS
T_C = 100^OC
Power Dissipation
Peak Diode Recovery dv/dt(3)
Derating factor above 25^OC
Gate source ESD
Operating and Storage Temperature Range
HBM-C = 100pf, R = 1.5kΩ
Maximum temperature for soldering
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, I_D = 12.6A, Start T_J = 25^OC.
3.I_SD =10A,di/dt ≤100A/us, V_DD≤BV_DS, Start T_J = 25^OC.
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
P_D
dV/dt
V_ESD(G-S)
T_J, T_STG
T_L
MHF10N60CT
600
10
8
40
±30
800
4.0
80
50
0.4
5.0
4000
-55 ~ +150
300
UNIT
V
A
V
mJ
A
mJ
W
W/^OC
V/ns
V
O_C
O_C
Document ID : DS-21M59
1
Revised Date : 2015/09/16
Revision : C1