MH07N60CT Datasheet, PDF (1/8 Pages) Chip Integration Technology Corporation – 600V Silicon N-Channel Power MOSFET

MH07N60CT
600V Silicon N-Channel Power MOSFET
■ Features
• Fast switching.
• ESD improved capability.
• Low gate charge.
• Low reverse transfer capacitances.
• 100% single pulse avalanche energy test.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220F molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Outline
TO-220AB
A
Marking code
G
H
E
NN
C
D
Dimensions in inches(millimeters)
symbol
Min
Max
A
10.10
10.50
B
15.0
16.0
B1
8.90
9.50
C
4.30
4.80
C1
2.30
3.00
D
1.20
1.40
E
0.70
0.90
F
0.35
0.55
G
1.17
1.37
H
3.30
3.80
L
12.70
14.70
N
2.34
2.74
Q
2.40
3.00
ØP
3.70
3.90
Drain
F
C1
Gate
Dimensions in inches and (millimeters)
Source
■ Absolute(T_C = 25^OC unless otherwise specified)
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current(1)
Gate-Source Voltage
Single Pulse Avalanche Energy(2)
Avalanche Current(1)
Repetitive Avalanche Energy(1)
CONDITIONS
T_C = 100^OC
Power Dissipation
Peak Diode Recovery dv/dt(3)
Derating factor above 25^OC
Gate source ESD
Operating and Storage Temperature Range
HBM-C = 100pf, R = 1.5kΩ
Maximum temperature for soldering
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, I_D = 10.5A, Start T_J = 25^OC.
3.I_SD =7A,di/dt ≤100A/us, V_DD≤BV_DS, Start T_J = 25^OC.
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
P_D
dV/dt
V_ESD(G-S)
T_J, T_STG
T_L
MH07N60CT
600
7
4.5
28
±30
550
3.3
54
100
0.8
5.0
3000
-55 ~ +150
300
UNIT
V
A
V
mJ
A
mJ
W
W/^OC
V/ns
V
O_C
O_C
Document ID : DS-21M67
1
Revised Date : 2015/09/16
Revision : C1