MBRF10L100CT-T Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 10A Trench Schottky Rectifier

Chip Integration Technology Corporation
MBRF10L100CT-T
10A Trench Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
5 X 2A
100V
150^OC
0.56V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Outline
ITO-220AB
ØP
A
B
C
Marking code
K
L
F
E
D
G
M
H
I
J
N
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
ØP
A
B
C
Marking code
K
L
F
E
D
G
M
H
I
J
N
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.383(9.72) 0.404(10.27)
B
0.248(6.3) 0.272(6.9)
C 0.571(14.5) 0.610(15.5)
D 0.516(13.1) 0.547(13.9)
E
-
0.161(4.1)
F
0.094(2.4) 0.126(3.2)
G
0.039(1.0) 0.051(1.3)
H
0.039(1.0) 0.051(1.3)
I
0.020(0.5) 0.035(0.9)
J
0.095(2.41) 0.105(2.67)
K
0.169(4.3) 0.189(4.8)
L
0.055(1.4) 0.122(3.1)
M
0.091(2.3) 0.117(2.96)
N 0.014(0.35) 0.031(0.8)
ØP 0.122(3.1) 0.142(3.6)
Dimensions in inches and (millimeters)
■ Circuit Diagram
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Peak Forward surge current
Peak repetitive reverse surge current
Typical Thermal resistance (per leg)
Storage temperature
Operating Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
2us-1Khz
I_RRM
Junction to case
R_θJC
Junction to ambient
R_θJA
T_STG
T_J
MBRF10L100CT-T
100
10
150
1
8
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
O_C/W
O_C/W
O_C
O_C
Parameter
Instantaneous Forward voltage drop
(per diode)
Instantaneous Reverse current
(per diode)
Rverse Breakdown Voltage (per diode)
Conditions
I_F = 3A, T_J = 25^OC
I_F = 5A, T_J = 25^OC
I_F = 5A, T_J = 125^OC
V_R = 100V T_J = 25^OC
V_R = 100V T_J = 125^OC
I_R = 0.1mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
100
TYP.
550
630
560
3
3
MAX.
670
50
25
UNIT
mV
uA
mA
V
Document ID : DS-11KIS
1
Revised Date : 2016/08/15
Revision : C1