CU20L60CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 20A Trench Schottky Rectifier

Chip Integration Technology Corporation
CU20L60CT
20A Trench Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
2 X 10A
60V
150^OC
0.55V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical Data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-251 Molded plastic body
.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 202. 6
• Polarity: As marked.
• Weight : Approximated 0.335 gram .
■Outline
TO-251
D
C
H
I
A
B
12 3
G
FF
EJ
M
K
TO-251(IPAK)
Unit:mm
DIM MIN MAX
A 6.85 7.25
B 5.90 6.30
C 5.13 5.53
D 6.40 6.80
E 3.95 4.35
F 2.19 2.39
G 0.45 0.85
H 2.20 2.40
I 0.41 0.61
J 0.71 1.31
K 0.41 0.61
M 2.96 3.16
Dimensions in inches and (millimeters)
■ Maximum Ratings
Rating at 25^OC ambient temperature unless otherwise specified.
■ Circuit Diagram
Parameter
Condition
Symbol
Maximum DC Blocking Voltage
V _DC
Forward Rectified Current (total device)
Forward Surge Current (per diode)
I_O
8.3ms single half sine-wave
superimposed on rate load (JEDEC method) ^IFSM
Peak Repetitive Reverse Surge Current (per diode) ^{Pulse width 2us, 1000Hz, square wave}
at T_A 25^oC,10 cycles
I_RRM
Junction to case
R_θJC
Thermal Resistance (per diode)
Junction to ambient
R_θJA
Storage Temperature
T_STG
Operating Junction Temperature
T_J
CU20L60CT
60
20
140
2
3
65
-55 ~ +150
-55 ~ +150
■ Electrical Characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
Parameter
Forward Voltage Drop (per diode)
Reverse Current (per diode)
Reverse Breakdown Voltage (per diode)
Condition
I_F = 3A, T_J = 25^OC
I_F = 10A, T _J = 25^OC
I_F = 10A, T _J = 125^OC
V_R = V_RWM , T_J = 25^OC
V_R = V_RWM , T_J = 125^OC
I_R = 0.1mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
60
TYP.
440
580
550
0.004
4
MAX.
640
0.05
20
UNIT
V
A
A
A
O_C/W
O_C
O_C
UNIT
mV
mA
V
Document ID : DS-11K009
1
Revised Date : 2016/07/28
Revision : C