CTP10S200SG Datasheet, PDF (1/4 Pages) Chip Integration Technology Corporation – 10A Trench Schottky Rectifier

Chip Integration Technology Corporation
CTP10S200SG
10A Trench Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
10A
200V
175^OC
0.63V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead free in compliance with EU RoHS.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, TO-277B.
• Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
• Weight : Approximated 0.093 grams.
■Outline
TO-277B
0.073 (1.85)
0.069 (1.75)
0.264 (6.70)
0.248 (6.30)
0.077 (1.96)
0.069 (1.76)
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
0.124 (3.15)
0.112 (2.85)
0.037 (0.95)
0.033 (0.85)
0.037 (0.95)
0.033 (0.85)
0.014 (0.35)
0.010 (0.25)
0.145 (3.69)
0.133 (3.39)
0.069 (1.74)
0.057 (1.44)
0.049 (1.25)
0.037 (0.95)
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
■Circuit Diagram
Parameter
Working peak reverse voltage
Forward rectified current
Forward surge current
Peak repetitive reverse surge current
Typical Thermal resistance
Storage temperature
Operating Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
2us - 1kHz
I_RRM
Junction to case
R_θJC
Junction to ambient
R_θJA
T_STG
T_J
CTP10S200SG
200
10
250
1
6
70
-55 ~ +150
-55 ~ +175
UNIT
V
A
A
A
O_C/W
O_C/W
O_C
O_C
Parameter
Forward voltage drop
Reverse current
Reverse Breakdown Voltage
Conditions
I_F = 3A, T_J = 25^OC
I_F = 10A, T_J = 25^OC
I_F = 10A, T_J = 125^OC
V_R = 200V T_J = 25^OC
V_R = 200V T_J = 125^OC
I_R = 0.1mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
200
TYP.
680
780
630
0.001
0.7
MAX.
840
0.03
10
UNIT
mV
mA
V
Document ID : DS-11K046
Revised Date : 2017/04/18
1
Revision : C