CSF40S45PT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 40A MOS Schottky Rectifier

Chip Integration Technology Corporation
CSF40S45PT
40A MOS Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
■ Features
2 X 20A
45V
150^OC
0.41V
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead free in compliance with EU RoHS.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-247 molded plastic body over
passivated chip.
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
• Weight : Approximated 5.60 gram.
■ Outline
TO-247
Φ0.150(3.8)
MAX
0.640(16.25)
MAX.
Marking code
123
0.177(4.5)
MAX.
0.094(2.4)
0.071(1.8)
0.126(3.2)
0.110(2.8)
0.055(1.4)
0.039(1.0)
0.222(5.65)
0.207(5.25)
0.209(5.30)
0.165(4.20)
0.083(2.1)
0.075(1.9)
0.118(3.0)
0.087(2.2)
0.033(0.85)
0.018(0.45)
■ Maximum Ratings
Rating at 25^OC ambient temperature unless otherwise specified.
■ Circuit Diagram
PIN 1
PIN 2
PIN 3
Parameter
Condition
Symbol
Working peak reverse voltage
V _RWM
Forward Rectified Current (total device)
Forward Surge Current (per diode)
I_O
8.3ms single half sine-wave
superimposed on rate load (JEDEC method) ^IFSM
Peak Repetitive Reverse Surge Current (per diode) ^{Pulse width 2us, 1000Hz, square wave}
at T_A 25^oC,10 cycles
I_RRM
Junction to case
R_θJC
Thermal Resistance (per diode)
Junction to ambient
R_θJA
Storage Temperature
T_STG
Operating Junction Temperature
T_J
CSF40S45PT
45
40
340
2
2
50
-55 ~ +150
-55 ~ +150
■ Electrical Characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
Parameter
Forward Voltage Drop (per diode)
Reverse Current (per diode)
Reverse Breakdown Voltage (per diode)
Condition
I_F = 3A, T_J = 25^OC
I_F = 20A, T_J = 25^OC
I_F = 20A, T_J = 125^OC
V_R = 45V , T_J = 25^OC
V_R = 45V , T_J = 125^OC
I_R = 0.5mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
45
TYP.
310
445
410
0.1
50
MAX.
500
0.5
100
UNIT
V
A
A
A
O_C/W
O_C
O_C
UNIT
mV
mA
V
Document ID : DS-11K045
Revised Date : 2017/04/05
1
Revision : C