CSF30S60CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 30A MOS Schottky Rectifier

Chip Integration Technology Corporation
CSF30S60CT-A
30A MOS Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RWM
T_J
V_F(Typ)
2 X 15A
60V
150^OC
0.50V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead free in compliance with EU RoHS.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Weight : Approximated 2.25 gram.
■ Outline
ITO-220AB
ØP
A
B
C
Marking code
K
L
F
E
D
G
M
H
I
J
N
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
ØP
A
B
C
Marking code
K
L
F
E
D
G
M
H
I
J
N
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.383(9.72) 0.404(10.27)
B
0.248(6.3) 0.272(6.9)
C 0.571(14.5) 0.610(15.5)
D 0.516(13.1) 0.547(13.9)
E
-
0.161(4.1)
F
0.094(2.4) 0.126(3.2)
G
0.039(1.0) 0.051(1.3)
H
0.039(1.0) 0.051(1.3)
I
0.020(0.5) 0.035(0.9)
J
0.095(2.41) 0.105(2.67)
K
0.169(4.3) 0.189(4.8)
L
0.055(1.4) 0.122(3.1)
M
0.091(2.3) 0.117(2.96)
N 0.014(0.35) 0.031(0.8)
ØP 0.122(3.1) 0.142(3.6)
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
■ Circuit Diagram
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Typical Thermal resistance(per diode)
Storage temperature
Operating Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
2us - 1kHz
I_RRM
Junction to case
Junction to Ambient
R_θJC
R_θJA
T_STG
T_J
CSF30S60CT-A
60
30
300
2
8
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
O_C/W
O_C/W
O_C
O_C
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
I_F = 3A, T_J = 25^OC
I_F = 15A, T_J = 25^OC
I_F = 15A, T_J = 125^OC
V_R = 60V, T_J = 25^OC
V_R = 60V, T_J = 125^OC
I_R = 0.5mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
60
TYP.
340
510
500
0.08
30
MAX.
560
0.5
50
UNIT
mV
mA
V
Document ID : DS-11K057
Revised Date : 2017/08/22
1
Revision : C