CSF30S45CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CSF30S45CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x15A
45V
150^OC
0.41V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead free in compliance with EU RoHS.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Weight : Approximated 2.25 gram.
■ Outline
ITO-220AB
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
J
N
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
J
N
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.383(9.72) 0.404(10.27)
B
0.248(6.3) 0.272(6.9)
C 0.571(14.5) 0.610(15.5)
D 0.516(13.1) 0.547(13.9)
E
-
0.161(4.1)
F
0.094(2.4) 0.126(3.2)
G
0.039(1.0) 0.051(1.3)
H
0.039(1.0) 0.051(1.3)
I
0.020(0.5) 0.035(0.9)
J
0.095(2.41) 0.105(2.67)
K
0.169(4.3) 0.189(4.8)
L
0.055(1.4) 0.122(3.1)
M
0.091(2.3) 0.117(2.96)
N 0.014(0.35) 0.031(0.8)
ØP 0.122(3.1) 0.142(3.6)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
■ Circuit Diagram
Parameter
Conditions
Symbol
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
Peak repetitive reverse surge current
2us - 1kHz
I_RRM
(per diode)
Thermal resistance (per diode)
Junction to case
R_θJC
Thermal resistance (per diode)
Junction to ambient
R_θJA
Storage temperature
T_STG
Operating Junction temperature
T_J
CSF30S45CT-A
45
30
320
2
8
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
O_C/W
O_C/W
O_C
O_C
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
I_F = 3A, T_J = 25^OC
I_F = 15A, T_J = 25^OC
I_F = 15A, T_J = 125^OC
V_R = 45V T_J = 25^OC
V_R = 45V T_J = 125^OC
I_R = 0.5mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
45
TYP.
330
450
410
MAX.
470
420
0.5
100
UNIT
mV
mA
V
Document ID : DS-11KAI
Revised Date : 2016/11/17
1
Revision : C8