CSF20S45CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 20A MOS Schottky Rectifier

Chip Integration Technology Corporation
CSF20S45CT-A
20A MOS Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x10A
45V
150^OC
0.39V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CSF20S45CTG-A.
• Lead free in compliance with EU RoHS.
■ Mechanical data
■ Outline
ITO-220AB
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
J
N
ØP
A
B
K
L
F
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
C
Marking code
123
E
D
G
M
H
I
PIN 1
PIN 3
J
N
PIN 2
Rating at 25^OC ambient temperature unless otherwise specified.
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.398(10.1)
B
0.264(6.7) 0.272(6.9)
C 0.587(14.9) 0.595(15.1)
D 0.492(12.5) 0.532(13.5)
E
0.142(3.4) 0.150(3.8)
F
0.098(2.5) 0.118(3.0)
G
0.043(1.1) 0.055(1.4)
H
0.043(1.1) 0.055(1.4)
I
0.020(0.5) 0.030(0.75)
J
0.095(2.42) 0.105(2.66)
K
0.173(4.4) 0.181(4.6)
L
0.102(2.6) 0.110(2.8)
M 0.097(2.45) 0.100(2.55)
N
0.020(0.5) 0.028(0.7)
ØP 0.134(3.4) 0.142(3.6)
Parameter
Conditions
Symbol
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
Peak repetitive reverse surge current
2us - 1kHz
I_RRM
(per diode)
Junction to case
R_θJC
Typical Thermal resistance (per leg)
Junction to ambient
R_θJA
Storage temperature
T_STG
Operating Junction temperature
T_J
CSF20S45CT-A
45
20
300
2
8
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
O_C/W
O_C/W
O_C
O_C
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
I_F = 3A, T_J = 25^OC
I_F = 10A, T_J = 25^OC
I_F = 10A, T_J = 125^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
I_R = 0.5mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
45
TYP.
335
430
390
0.1
30
MAX.
460
0.4
100
UNIT
mV
mA
V
Document ID : DS-11KA7
Revised Date : 2016/12/19
1
Revision : C9