CSF20L200CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 20A Low Barrier Diode

CSF20L200CT
20A Low Barrier Diode
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CSF20L200CTG.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
■ Outline
ITO-220AB
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
J
N
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
PIN 1
PIN 3
J
N
PIN 2
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.383(9.72) 0.404(10.27)
B
0.248(6.3) 0.272(6.9)
C 0.571(14.5) 0.610(15.5)
D 0.516(13.1) 0.547(13.9)
E
-
0.161(4.1)
F
0.094(2.4) 0.126(3.2)
G
0.039(1.0) 0.051(1.3)
H
0.039(1.0) 0.051(1.3)
I
0.020(0.5) 0.035(0.9)
J
0.095(2.41) 0.105(2.67)
K
0.169(4.3) 0.189(4.8)
L
0.055(1.4) 0.122(3.1)
M
0.091(2.3) 0.117(2.96)
N 0.014(0.35) 0.031(0.8)
ØP 0.122(3.1) 0.142(3.6)
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RRM
V_RWM
V_RM
I_O
I_FSM
2us - 1kHz
I_RRM
Junction to case
R_θJC
T_J, T_STG
CSF20L200CT
CSF20L200CT
200
20
180
3
4
-65 ~ +175
UNIT
V
A
A
A
O_C/W
O_C
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
I_F = 10A, T_J = 25^OC
I_F = 10A, T_J = 125^OC
I_F = 20A, T_J = 25^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
Reverse recovery time (per diode)
I_F = 0.5A, I_R = 1A, I_RR = 0.25A
I_F = 1A, V_R = 30V, di/dt = 100A/us, T_J = 25^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
1
Symbol MIN.
V_F
I_R
t_rr
TYP.
660
24
20
MAX.
860
720
960
0.1
10
30
25
UNIT
mV
mA
ns
Document ID : DS-11K5T
Revised Date : 2015/05/25
Revision : C7