CSF10L150CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CSF10L150CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x5A
150V
175^OC
0.65V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CSF10L150CTG-A.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
■ Outline
ITO-220AB
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
J
N
ØP
A
B
K
L
F
C
Marking code
123
E
D
G
M
H
I
PIN 1
PIN 3
J
N
PIN 2
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.383(9.72) 0.404(10.27)
B
0.248(6.3) 0.272(6.9)
C 0.571(14.5) 0.610(15.5)
D 0.516(13.1) 0.547(13.9)
E
-
0.161(4.1)
F
0.094(2.4) 0.126(3.2)
G
0.039(1.0) 0.051(1.3)
H
0.039(1.0) 0.051(1.3)
I
0.020(0.5) 0.035(0.9)
J
0.095(2.41) 0.105(2.67)
K
0.169(4.3) 0.189(4.8)
L
0.055(1.4) 0.122(3.1)
M
0.091(2.3) 0.117(2.96)
N 0.014(0.35) 0.031(0.8)
ØP 0.122(3.1) 0.142(3.6)
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current
Forward surge current
Peak repetitive reverse surge current
Thermal resistance(1)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
V_RRM
V_RWM
V_RM
I_O
I_FSM
I_RRM
R_θJC
T_J, T_STG
CSF10L150CT-A
CSF10L150CT
150
10
150
1
4
-75 ~ +175
UNIT
V
A
A
A
O_C/W
O_C
Parameter
Conditions
Forward voltage drop
Reverse current
I_F = 5A, T_J = 25^OC
I_F = 5A, T_J = 125^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
V_F
I_R
TYP.
650
MAX.
840
740
0.1
10
UNIT
mV
mA
Document ID : DS-11KB5
1
Revised Date : 2015/08/05
Revision : C6