CSB20S45CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CSB20S45CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x10A
45V
150^OC
0.36V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CSΒ20S45CTG-A.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body over
passivated chip.
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
• Polarity: Color band denotes cathode end.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Outline
D²PAK(TO-263)
0.411(10.45)
0.380(9.65)
0.055(1.40)
0.245(6.22)
0.031(0.80)
MIN
2
0.370(9.40)
Marking code
0.320(8.13)
1
3
0.228(5.80)
0.173(4.40)
0.063(1.60)
0.024(0.60)
0.205(5.20)
0.189(4.80)
PIN 1
PIN 3
PIN 2
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0~0.012(0~0.30)
0.110(2.79)
0.090(2.29)
0.024(0.60)
0.011(0.28)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Conditions
Symbol
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RRM
V_RWM
V_RM
I_O
I_FSM
Peak repetitive reverse surge current
2us - 1kHz
I_RRM
(per diode)
Thermal resistance(1)
Junction to case
R_θJC
Operating and Storage temperature
T_J, T_STG
CSB20S45CT-A
CSB20S45CT
45
20
200
3
4
-55 ~ +150
UNIT
V
A
A
A
O_C/W
O_C
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
I_F = 10A, T_J = 25^OC
I_F = 10A, T_J = 125^OC
I_F = 20A, T_J = 25^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
V_F
I_R
TYP.
360
MAX.
470
440
600
0.5
100
UNIT
mV
mA
Document ID : DS-11KDZ
1
Revised Date : 2015/08/11
Revision : C1