CS40S45CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CS40S45CT
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x20A
45V
150^OC
0.415V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
■ Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
E
H
I
D
K
L
M
JN
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.398(10.1) 0.406(10.3)
B
0.236(6.0) 0.252(6.4)
C 0.579(14.7) 0.594(15.1)
D 0.543(13.8) 0.551(14.0)
E 0.143(3.63) 0.159(4.03)
F 0.104(2.64) 0.112(2.84)
G
0.335(8.5) 0.350(8.9)
H 0.046(1.17) 0.054(1.37)
I
0.028(0.71) 0.036(0.91)
J
0.098(2.49) 0.102(2.59)
K 0.176(4.47) 0.184(4.67)
L
0.046(1.17) 0.054(1.37)
M
0.102(2.6) 0.110(2.8)
N 0.019(0.28) 0.021(0.48)
ØP 0.147(3.74) 0.155(3.94)
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
ØP
A
F
B
C
Marking code
G
123
E
H
I
D
K
L
M
JN
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.394(10.0) 0.413(10.5)
B
0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E
0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I
0.029(0.75) 0.037(0.95)
J
0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L
0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
■ Maximum ratings and electrical characteristics
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Conditions
Symbol
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RRM
V_RWM
V_RM
I_O
I_FSM
Thermal resistance(1)
Junction to case
R_θJC
Operating and Storage temperature
Parameter
Conditions
T_J, T_STG
Symbol
Diode junction capacitance
Forward voltage drop (per diode)
Reverse current (per diode)
f=1MHz and applied 4V DC reverse voltage
C_j
I_F = 5A, T_J = 25^OC
I_F = 5A, T_J = 125^OC
I_F = 10A, T_J = 25^OC
V_F
I_F = 10A, T_J = 125^OC
I_F = 20A, T_J = 25^OC
I_F = 20A, T_J = 125^OC
V_R = V_RRM T_J = 25^OC
I_R
V_R = V_RRM T_J = 125^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
CS40S45CT
CS40S45CT
45
40
280
4
-55 ~ +150
MIN. TYP. MAX.
1615
340
390
250
290
385
435
310
360
450
500
415
460
0.2
0.5
100
UNIT
V
A
A
O_C/W
O_C
UNIT
pF
mV
mA
Document ID : DS-11K5F
1
Revised Date : 2015/08/04
Revision : C6