CS30S45CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 30A MOS Schottky Rectifier

Chip Integration Technology Corporation
CS30S45CT-A
30A MOS Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x15A
45V
150^OC
0.41V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CS30S45CTG-A.
• Lead free in compliance with EU RoHS.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
■ Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
E
H
I
D
K
L
M
JN
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.398(10.1) 0.406(10.3)
B
0.236(6.0) 0.252(6.4)
C 0.579(14.7) 0.594(15.1)
D 0.543(13.8) 0.551(14.0)
E 0.143(3.63) 0.159(4.03)
F 0.104(2.64) 0.112(2.84)
G
0.335(8.5) 0.350(8.9)
H 0.046(1.17) 0.054(1.37)
I
0.028(0.71) 0.036(0.91)
J
0.098(2.49) 0.102(2.59)
K 0.176(4.47) 0.184(4.67)
L
0.046(1.17) 0.054(1.37)
M
0.102(2.6) 0.110(2.8)
N 0.019(0.28) 0.021(0.48)
ØP 0.147(3.74) 0.155(3.94)
ØP
A
F
B
C
Marking code
G
123
E
H
I
D
K
L
M
JN
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.394(10.0) 0.413(10.5)
B
0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E
0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I
0.029(0.75) 0.037(0.95)
J
0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L
0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Parameter
Working peak reverse voltage
Forward rectified current
Forward surge current
Peak repetitive reverse surge current
Typical Thermal resistance (per diode)
Storage temperature
Operating Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
2us - 1kHz
I_RRM
Junction to case
R_θJC
Junction to ambient
R_θJA
T_STG
T_J
CS30S45CT-A
45
30
320
2
2
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
O_C/W
O_C/W
O_C
O_C
Parameter
Forward voltage drop
Reverse current
Reverse Breakdown Voltage (per diode)
Conditions
I_F = 3A, T_J = 25^OC
I_F = 15A, T_J = 25^OC
I_F = 15A, T_J = 125^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
I_R = 0.5mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
45
TYP.
330
410
MAX.
470
0.5
100
UNIT
mV
mA
V
Document ID : DS-11KAJ
Revised Date : 2016/12/19
1
Revision : C7