CS30L60CTG-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 30A Low Barrier Diode

CS30L60CTG-A
30A Low Barrier Diode
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_fmax)
2x15A
60V
150^OC
0.58V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Halogen-free part
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Outline
TO-220AB
0.419(10.66)
0.387(9.85 )
0.139(3.55 )
MIN
0.269(6.85)
0.226(5.75)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0.624(15.87)
0.548(13.93)
0.038(0.96)
0.019(0.50)
0.177(4.50) MAX
0.50(12.70) MIN
0.1(2.54)
0.025(0.65) MAX
PIN 1
PIN 3
PIN 2
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Thermal resistance(1) (per diode)
Operating and Storage temperature
Conditions
Symbol
T_C = 110^OC
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to case
V_RRM
V_RWM
V_RM
I_O
I_FSM
R_θJC
T_J, T_STG
CS30L60CTG-A
CS30L60CT
60
30
280
2
-65 ~ +150
UNIT
V
A
A
O_C/W
O_C
Parameter
Conditions
Forward voltage drop (per diode)
Reverse current (per diode)
I_F = 15A, T_J = 25^OC
I_F = 15A, T_J = 125^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
V_F
I_R
TYP.
MAX.
600
550
0.5
60
UNIT
mV
mA
Document ID : DS-11KHB
1
Revised Date : 2015/08/03
Revision : C