CS20S200CT-A Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation
CS20S200CT-A
Super Low Barrier High Voltage Power Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_(Typ)
2x10A
200V
175^OC
0.65V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
■ Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
E
H
I
D
K
L
M
JN
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.398(10.1) 0.406(10.3)
B
0.236(6.0) 0.252(6.4)
C 0.579(14.7) 0.594(15.1)
D 0.543(13.8) 0.551(14.0)
E 0.143(3.63) 0.159(4.03)
F 0.104(2.64) 0.112(2.84)
G
0.335(8.5) 0.350(8.9)
H 0.046(1.17) 0.054(1.37)
I
0.028(0.71) 0.036(0.91)
J
0.098(2.49) 0.102(2.59)
K 0.176(4.47) 0.184(4.67)
L
0.046(1.17) 0.054(1.37)
M
0.102(2.6) 0.110(2.8)
N 0.019(0.28) 0.021(0.48)
ØP 0.147(3.74) 0.155(3.94)
• Lead-free parts meet environmental standards of
Alternate
MIL-STD-19500 /228
ØP
A
K
L
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.394(10.0) 0.413(10.5)
■ Mechanical data
F
B
B
0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
C
Marking code
G
y_{1 2 3}
r_E
H
a_I
in^D
M
E
0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I
0.029(0.75) 0.037(0.95)
J
0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L
0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
• Weight : Approximated 2.25 gram.
l ^{i m} _{■ Maximum ratings and electrical characteristics}
PIN 1
PIN 3
JN
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 2
Dimensions in inches and (millimeters)
r ^{e Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.}
For capacitive load, derate current by 20%.
Parameter
P
Conditions
Symbol
CS20S200CT-A
UNIT
Marking code
CS20S200CT
Peak repetitive reverse voltage
V_RRM
Working peak reverse voltage
V_RWM
200
V
DC blocking voltage
V_RM
Forward rectified current (total device)
I_O
20
A
8.3ms single half sine-wave superimposed on
Forward surge current (per diode)
rate load (JEDEC method)
I_FSM
250
A
Peak repetitive reverse surge current
(per diode)
2us - 1kHz
I_RRM
1
A
Thermal resistance(1) (per diode)
Operating and Storage temperature
Junction to case
R_θJC
T_J, T_STG
2
-55 ~ +175
O_C/W
O_C
Parameter
Conditions
Forward voltage drop (per diode)
I_F = 10A, T_J = 25^OC
I_F = 10A, T_J = 125^OC
Reverse current (per diode)
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol MIN.
V_F
I_R
TYP.
650
MAX.
830
690
0.1
30
UNIT
mV
mA
Document ID : DS-11KGH
1
Revised Date : 2015/08/06
Revision : C2