CP3S100S Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 3A Surface Mount Trench Schottky Rectifier

CP3S100S
3A Surface Mount Trench Schottky Rectifier
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CP3S100SG.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, TO-277.
• Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
• Weight : Approximated 0.093 grams.
■ Outline
TO-277
0.073 (1.85)
0.069 (1.75)
0.264 (6.70)
0.248 (6.30)
1
2
3
PIN 2
PIN 1
PIN 3
0.077 (1.96)
0.069 (1.76)
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
0.124 (3.15)
0.112 (2.85)
0.014 (0.35)
0.010 (0.25)
0.145 (3.69)
0.133 (3.39)
0.037 (0.95)
0.033 (0.85)
0.037 (0.95)
0.033 (0.85)
0.069 (1.74)
0.057 (1.44)
0.049 (1.25)
0.037 (0.95)
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current
Forward surge current
Operating and Storage temperature
Thermal Resistance
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to Case
V_RRM
V_RWM
V_RM
I_O
I_FSM
T_J, T_STG
R_θJC
CP3S100S
CP3S100S
100
3
100
-55 ~ +150
4
UNIT
V
A
A
O_C
O_C/W
Parameter
Conditions
Symbol
I_F = 3A, T_J = 25^OC
Forward voltage drop
I_F = 3A, T_J = 125^OC
V_F
V_R = 100V, T_J = 25^OC
Reverse current
I_R
V_R = 100V, T_J = 125^OC
Note : 1.FR-4 PCB, 2oz.Copper.
2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.
MIN.
TYP.
550
500
20
5
MAX.
620
UNIT
mV
100
µA
20
mA
Document ID : DS-12KHE
1
Revised Date : 2015/08/05
Revision : C