CF4060CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 40A High Power Schottky Barrier Rectifier

Chip Integration Technology Corporation
CF4060CT
40A High Power Schottky Barrier Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
2 X 20A
60V
125^OC
0.39V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
■ Outline
ITO-220AB
ØP
A
B
C
Marking code
K
L
F
E
D
G
M
H
I
J
N
Dimensions in inches(millimeters)
symbol
Min
Max
A
0.390(9.9) 0.408(10.36)
B
0.268(6.8) 0.283(7.2)
C 0.583(14.8) 0.598(15.2)
D 0.512(13.0) 0.543(13.8)
E
0.102(2.6) 0.150(3.8)
F 0.101(2.55) 0.112(2.85)
G
0.043(1.1) 0.053(1.35)
H
0.043(1.1) 0.053(1.35)
I
0.020(0.5) 0.028(0.7)
J
0.098(2.49) 0.102(2.59)
K
0.169(4.3) 0.185(4.7)
L
0.112(2.85) 0.128(3.25)
M
0.098(2.5) 0.114(2.9)
N
0.020(0.5) 0.028(0.7)
ØP 0.130(3.3) 0.134(3.5)
ØP
A
B
C
Marking code
K
L
F
E
D
G
M
H
I
J
N
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.383(9.72) 0.404(10.27)
B
0.248(6.3) 0.272(6.9)
C 0.571(14.5) 0.610(15.5)
D 0.516(13.1) 0.547(13.9)
E
-
0.161(4.1)
F
0.094(2.4) 0.126(3.2)
G
0.039(1.0) 0.051(1.3)
H
0.039(1.0) 0.051(1.3)
I
0.020(0.5) 0.035(0.9)
J
0.095(2.41) 0.105(2.67)
K
0.169(4.3) 0.189(4.8)
L
0.055(1.4) 0.122(3.1)
M
0.091(2.3) 0.117(2.96)
N 0.014(0.35) 0.031(0.8)
ØP 0.122(3.1) 0.142(3.6)
Dimensions in inches and (millimeters)
■ Circuit Diagram
Rating at 25^OC ambient temperature unless otherwise specified.
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Thermal resistance (per diode)
Storage temperature
Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RWM
I_O
I_FSM
2us
I_RRM
Junction to case
Junction to ambient
R_θJC
R_θJA
T_STG
T_J
CF4060CT
60
40
250
2
4
35
-55 ~ +150
-55 ~ +125
UNIT
V
A
A
A
O_C/W
O_C
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown voltage (per diode)
Conditions
I_F = 3A, T_J = 25^OC
I_F = 20A, T_J = 25^OC
I_F = 20A, T_J = 125^OC
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
Ir = 0.5mA, T_J=25^oC
Symbol MIN.
V_F
I_R
V_BR
60
TYP.
335
540
390
0.09
75
MAX.
580
0.25
150
UNIT
mV
mA
V
Document ID : DS-11KIZ
1
Revised Date : 2016/04/14
Revision : C