C40S100CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 40A Trench Schottky Rectifier

Chip Integration Technology Corporation
C40S100CT
40A Trench Schottky Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
2 X 20A
100V
150^OC
0.615V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead free in compliance with EU RoHS.
■ Mechanical Data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body .
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 202. 6
• Polarity: As marked.
• Weight : Approximated 2.25 gram.
TO-220AB
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN
0.269(6.85)
0.226(5.75)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0.624(15.87)
0.548(13.93)
0.038(0.96)
0.019(0.50)
0.177(4.50)MAX
0.50(12.70)MIN
0.1(2.54)
0.025(0.65)MAX
Dimensions in inches and (millimeters)
■ Maximum Ratings
Rating at 25^OC ambient temperature unless otherwise specified.
■ Circuit Diagram
Parameter
Working peak reverse voltage
Forward Rectified Current (total device)
Forward Surge Current (per diode)
Condition
Symbol
V _RWM
I_O
8.3ms single half sine-wave
superimposed on rate load (JEDEC method) ^IFSM
C40S100CT
100
40
300
Peak Repetitive Reverse Surge Current (per diode) 2us - 1kHz
I_RRM
1
Thermal Resistance (per diode)
Storage Temperature
Operating Junction Temperature
Junction to case
Junction to ambient
R_θJC
R_θJA
T_STG
T_J
2
50
-55 ~ +150
-55 ~ +150
■ Electrical Characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
Parameter
Forward Voltage Drop (per diode)
Reverse Current (per diode)
Reverse Breakdown Voltage (per diode)
Condition
I_F = 3A, T_J = 25^OC
I_F = 20A, T_J = 25^OC
I_F = 20A, T_J = 125^OC
V_R = 100V, T_J = 25^OC
V_R = 100V, T_J = 125^OC
I_R = 0.1mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
100
TYP.
430
640
615
0.02
15
MAX.
710
0.1
45
UNIT
V
A
A
A
O_C/W
O_C
O_C
UNIT
mV
mA
V
Document ID : DS-11KEK
Revised Date : 2016/11/03
1
Revision : C7