C20U60CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 20A High Power Trench Schottky Barrier Rectifier

Chip Integration Technology Corporation
C20U60CT
20A High Power Trench Schottky Barrier Rectifier
Main Product Characteristics
I_F(AV)
V_RRM
T_J
V_F(Typ)
2 X 10A
60V
150^OC
0.45V
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical Data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 202. 6
• Polarity: As marked.
• Weight : Approximated 2.25 gram.
■Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
E
H
I
D
K
L
M
JN
ØP
A
F
B
C
Marking code
G
123
E
H
I
D
K
L
M
JN
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.398(10.1) 0.406(10.3)
B
0.236(6.0) 0.252(6.4)
C 0.579(14.7) 0.594(15.1)
D 0.543(13.8) 0.551(14.0)
E 0.143(3.63) 0.159(4.03)
F 0.104(2.64) 0.112(2.84)
G
0.335(8.5) 0.350(8.9)
H 0.046(1.17) 0.054(1.37)
I
0.028(0.71) 0.036(0.91)
J
0.098(2.49) 0.102(2.59)
K 0.176(4.47) 0.184(4.67)
L
0.046(1.17) 0.054(1.37)
M
0.102(2.6) 0.110(2.8)
N 0.019(0.28) 0.021(0.48)
ØP 0.147(3.74) 0.155(3.94)
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.394(10.0) 0.413(10.5)
B
0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E
0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I
0.029(0.75) 0.037(0.95)
J
0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L
0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
Dimensions in inches and (millimeters)
■ Maximum Ratings
Rating at 25^OC ambient temperature unless otherwise specified.
■ Circuit Diagram
Parameter
Condition
Symbol
Working Peak Reverse Voltage
V_RWM
Forward Rectified Current (total device)
Forward Surge Current (per diode)
I_O
8.3ms single half sine-wave
superimposed on rate load (JEDEC method) ^IFSM
Peak Repetitive Reverse Surge Current (per diode) ^{Pulse width 2us, 1000Hz, square wave}
at T_A 25^oC,10 cycles
I_RRM
Junction to case
R_θJC
Thermal Resistance (per diode)
Junction to ambient
R_θJA
Storage Temperature
T_STG
Operating Junction Temperature
T_J
C20U60CT
60
20
200
2
2
50
-55 ~ +150
-55 ~ +150
■ Electrical Characteristics
Rating at 25^OC ambient temperature unless otherwise specified.
Parameter
Forward Voltage Drop (per diode)
Reverse Current (per diode)
Reverse Breakdown Voltage (per diode)
Condition
I_F = 3A, T_J = 25^OC
I_F = 10A, T _J = 25^OC
I_F = 10A, T _J = 125^OC
V_R = V_RWM , T_J = 25^OC
V_R = V_RWM , T_J = 125^OC
I_R = 0.1mA, T_J = 25^OC
Symbol MIN.
V_F
I_R
V_BR
60
TYP.
410
500
450
0.011
MAX.
560
0.1
40
UNIT
V
A
A
A
O_C/W
O_C
O_C
UNIT
mV
mA
V
Document ID : DS-11KIK
1
Revised Date : 2016/05/31
Revision : C