C10S120CT Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 10A Trench Schottky Rectifier

C10S120CT
10A Trench Schottky Rectifier
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body over
passivated chip.
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
• Polarity: Color band denotes cathode end.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Maximum ratings and electrical characteristics
■ Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
E
H
I
D
K
L
M
JN
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.398(10.1) 0.406(10.3)
B
0.236(6.0) 0.252(6.4)
C 0.579(14.7) 0.594(15.1)
D 0.543(13.8) 0.551(14.0)
E 0.143(3.63) 0.159(4.03)
F 0.104(2.64) 0.112(2.84)
G
0.335(8.5) 0.350(8.9)
H 0.046(1.17) 0.054(1.37)
I
0.028(0.71) 0.036(0.91)
J
0.098(2.49) 0.102(2.59)
K 0.176(4.47) 0.184(4.67)
L
0.046(1.17) 0.054(1.37)
M
0.102(2.6) 0.110(2.8)
N 0.019(0.28) 0.021(0.48)
ØP 0.147(3.74) 0.155(3.94)
ØP
A
F
B
C
Marking code
G
123
E
H
I
D
K
L
M
JN
Alternate
Dimensions in inches(millimeters)
symbol
Min
Max
A 0.394(10.0) 0.413(10.5)
B
0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E
0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I
0.029(0.75) 0.037(0.95)
J
0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L
0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward rectified current (total device)
Forward surge current (per diode)
Operating and Storage temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
V_RRM
V_RWM
V_RM
I_O
I_FSM
T_J, T_STG
C10S120CT
C10S120CT
120
10
120
-40 ~ +150
UNIT
V
A
A
O_C
Parameter
Conditions
Breakdown voltage (per diode)
Forward voltage drop (per diode)
Reverse current (per diode)
I_R = 0.5mA, T_J = 25^OC
I_F = 3A, T_J = 25^OC
I_F = 5A, T_J = 25^OC
I_F = 3A, T_J = 125^OC
I_F = 5A, T_J = 125^OC
V_R = 90V, T_J = 25^OC
V_R = 120V, T_J = 25^OC
V_R = 90V, T_J = 125^OC
V_R = 120V, T_J = 125^OC
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Symbol
V_BR
MIN.
120
V_F
I_R
TYP.
570
660
510
580
10
15
10
MAX.
700
620
100
40
UNIT
V
mV
uA
mA
Document ID : DS-11KF9
1
Revised Date : 2015/05/28
Revision : C2