BAS70 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70 / 04 / 05 / 06
70mA Surface Mount Small Signal Diodes
■ Features
• Low current rectification and high speed switching.
• Small surface mount type.
• Up to 70mA current capability.
• Low forward voltage drop (VF = 1.00V typ. @15mA)
• Silicon epitaxial planar chip, metal silicon junction.
• High speed ( trr < 5 ns )
• Suffix "G" indicates Halogen-free part, ex.BAS70G.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
■ Outline
SOT-23
C
0.020 (0.50)
0.015 (0.37)
C
Marking code
0.040 (1.02)
0.035 (0.89)
AB
.081(2.04)
.070(1.78)
0.120 (3.04)
0.110 (2.80)
BAS70
A
B
C
BAS70-06
A
B
C
BAS70-05
A
B
C
0.044 (1.11)
0.035 (0.89)
BAS70-04
A
B
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol BAS70 BAS70-04 BAS70-05 BAS70-06
Marking code
73, BE
74, CG
75, EH
76, GK
Peak Repetitive Reverse Voltage
Work Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse Voltage
Forward Continuous Current(1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation(1)
Thermal Resistance Junction to Ambient Air
Junction and Storage Temperature
@tp < 1.0s
V_RRM
V_RRM
V_R
V_R(RMS)
I _{F ( AV)}
I_FSM
P_D
R_θJA
T_J , T_STG
70
49
70
100
200
625
-65 ~ +150
UNIT
V
mAdc
mAdc
mW
O_C/W
O_C
Characteristic
Reverse Breakdown Voltage
I(_BR) = 10uAdc
Reverse Voltage Leakage Current
V_R = 50Vdc
Total Capacitance
V_R = 0, f = 1.0MHz
Forward Voltage
Reverse Recovery Time
I_F = 1.0mAdc
I_F = 15mAdc
I_F = I_R = 10mAdc, V_R = 5.0Vdc, I_R(REC) = 1.0mAdc, R_L = 100Ω
NOTE: 1.Valid provided that terminals are kept at ambient temperature.
2.Test period < 300us.
Symbol
V_(BR)
I_R
C_D
V_F
trr
1
MIN.
70
MAX.
0.1
2.0
410
1000
5.0
UNIT
Vdc
uAdc
pF
mVdc
nS
Document ID : DS-22K1U
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C