BAS40 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40 / 04 / 05 / 06
200mA Surface Mount Small Signal Diodes
■ Features
• Low current rectification and high speed switching.
• Small surface mount type.
• Up to 200mA current capability.
• Low forward voltage drop (VF = 1.00V typ. @40mA).
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.BAS40G.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
■ Outline
SOT-23
C
0.020 (0.50)
0.015 (0.37)
C
Marking code
0.040 (1.02)
0.035 (0.89)
AB
.081(2.04)
.070(1.78)
0.120 (3.04)
0.110 (2.80)
BAS40
A
B
C
BAS40-06
A
B
C
BAS40-05
A
B
C
0.044 (1.11)
0.035 (0.89)
BAS40-04
A
B
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol BAS40
BAS40-04 BAS40-05 BAS40-06
Marking code
B1
CB
45
L2
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Power Dissipation
TA = 25^OC
Forward Continuous Current
Junction Temperature
Storage Temperature
Operating ambient temperature
Repetitive Peak forward surge current
Non-repetitive peak forward current
@ t_P≤1s;δ≤0.5
@ t_P<10ms
Thermal resistance from junction to ambient
V_RRM
V_RWM
V_R
P_D
I_F
T_J
T_STG
T_amb
I_FSM
I_FSM
R_θJA
40
150
120
+150
-65 ~ +150
-65 ~ +150
120
200
500
UNIT
V
mW
mA
O_C
O_C
O_C
mA
mA
K /W
Characteristic
Forward Voltage
Diode Capacitance
Reverse Current
I_F = 1mA
I_F = 10mA
I_F = 40mA
V_R = 0V, f = 1.0MHz
V_R = 30V
V_R = 40V
Symbol
V_F
C_d
I_R
MIN.
TYP.
MAX.
0.40
0.56
1.0
5.0
1
10
UNIT
V
pF
uA
Document ID : DS-22K1Q
1
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C