B120W-ST Datasheet, PDF (1/3 Pages) Chip Integration Technology Corporation – 1A Surface Mount Schottky Barrier Rectifiers

B120W-ST THRU B1200W-ST
1A Surface Mount Schottky Barrier Rectifiers
■ Features
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.B120WG-ST.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123ST
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Weight : Approximated 0.0155 gram
■ Outline
SOD-123ST
0.039(1.0)
0.031(0.8)
0.154(3.9)
0.138(3.5)
0.016(0.4) Typ.
0.079(2.0)
0.063(1.6)
0.008(0.20)Max.
0.096(2.45)
0.081(2.05)
0.055(1.4)
0.039(1.0)
0.039 (1.0)
0.024 (0.6)
0.051(1.3)
0.035(0.9)
0.039(1.0)
0.031(0.8)
0.057(1.45)
0.041(1.05)
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Thermal resistance
Storage temperature
Conditions
Symbol
See Fig.1
I_O
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
I_FSM
V_R = V_RRM T_A = 25^OC
I_R
V_R = V_RRM T_A = 100^OC
f=1MHz and applied 4V DC reverse voltage
C_J
Junction to ambient
R_θJA
T_STG
MIN.
-55
TYP.
120
88
MAX.
1.0
30
0.1
20
+175
UNIT
A
A
mA
pF
O_C/W
O_C
Symbol
Max.
repetitive peak
Marking code
reverse voltage
V_RRM (V)
B120W-ST
12
20
B140W-ST
14
40
B160W-ST
16
60
B1100W-ST
10
100
B1150W-ST
115
150
B1200W-ST
120
200
Max.
RMS voltage
V_RMS (V)
14
28
42
70
105
140
Max. DC
blocking voltage
V_R (V)
20
40
60
100
150
200
Max. forward voltage
@1A, T_A = 25^OC
V_F (V)
0.45
0.50
0.70
0.81
0.87
0.90
Operating temperature
T_J (^OC)
-55 ~ +150
-55 ~ +175
Document ID : DS-12K3X
1
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C1