2N7002D Datasheet, PDF (1/6 Pages) Chip Integration Technology Corporation – 60V N-Channel MOSFET

Chip Integration Technology Corporation
2N7002D
60V N-Channel MOSFET
N-Channel MOSFET – ESD Protected
Features:
● Simple Drive Requirement
● Small Package Outline
● ROHS Compliant
● ESD Rating = 2000V HBM
Applications:
● High density cell design for low RDS(ON)
● Voltage controlled small signal switching.
● Rugged and reliable.
● High saturation current capability.
● High-speed switching.
● Not thermal runaway.
● The soldering temperature and time shall
not exceed 260℃ for more than 10 seconds.
(SOT-23)
Top View
GENERAL DESCRIPTION
The 2N7002D is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance
(PCB mounted) (Note 2)
Symbol
V _DS
V _GS
I_D
I _DM
P_D @T_A=25?C
P_D @T_A=75?C
T_J, Tstg
R_θJA
Ratings
60
± 20
300
2000
0.35
0.21
-55 ~ 150
357
Unit
V
V
mA
mA
W
℃
℃/W
Document ID : DS-22M85
Revised Date : 2017/08/14
1
Revision : C